| PART |
Description |
Maker |
| RA30H1317M1 RA30H1317M1-101 |
RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA13H1317M_06 RA13H1317M RA13H1317M-101 RA13H1317M |
RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA30H1317M111 RA30H1317M1-201 |
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| STFI26NM60N |
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in I2PAKFP package
N-channel 600 V, 0.135, 20 A MDmesh II Power MOSFET in PAKFP package
|
ST Microelectronics
STMicroelectronics
|
| M67748HR |
RF POWER MODULE 150-175MHz, 12.5V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| RD30HVF1 RD30HVF1-101 |
Silicon MOSFET Power Transistor,175MHz,30W
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RD07MVS110 |
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
|
Mitsubishi Electric Semiconductor
|
| RD07MVS2 |
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
|
Mitsubishi Electric Semiconductor
|
| RD07MVS1B |
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
|
Mitsubishi Electric Semiconductor
|
| RD02MUS1B |
Silicon MOSFET Power Transistor 175MHz,520MHz,2W
|
Mitsubishi Electric Semiconductor
|
| DU28120V |
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
